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Low Temperature Functionalization of Two-Dimensional Boron Nitride for Electrochemical Sensing

S. Daneshnia, M. Adeli*, A. Yari, A. Shams, I. S. Donskyi, W. E.S. Unger – 2019

Two-dimensional hexagonal boron nitride (h-BN) as an emerging nanomaterial exhibits unique physicochemical properties, making it suitable candidate for a wide spectrum of applications. However, due to its poor functionality, the processability of this nanomaterial is low. In this work, we report on a straightforward and scalable approach for the functionalization of h-BN by nitrene [2 + 1] cycloaddition at room temperature. The triazine-functionalized h-BN (Trz-BNs) showed a high reactivity toward nucleophiles, through which post-modifications are performable. The post-modification of Trz-BNs by L-cysteine was studied using cyclic voltammetry and differential pulse voltammetry. Taking advantage of the scalable and straightforward functionalization as well as ability of triazine functional groups for the controlled post-modifications, Trz-BNs is a promising nanoplatform for a wide range of future applications.

Title
Low Temperature Functionalization of Two-Dimensional Boron Nitride for Electrochemical Sensing
Author
S. Daneshnia, M. Adeli*, A. Yari, A. Shams, I. S. Donskyi, W. E.S. Unger
Date
2019
Identifier
10.1088/2053-1591/ab317b
Citation
Mater. Res. Express, 2019, 6, 095076
Type
Text