Springe direkt zu Inhalt

5. Physical properties of homogeneous TiO2 films prepared by high power impulse magnetron sputtering as a function of crystallographic phase and nanostructure.

Straňák, V.*; Čada, M.; Quaas, M.; Block, S.; Bogdanowicz, R.; Kment, Š.; Wulff, H.; Hubička, Z.; Helm, C.A.; Tichý, M.; Hippler, R. – 2009

Optical, photo-electrochemical, crystallographic and morphological properties of TiO2 thin films prepared by high power impulse magnetron sputtering at low substrate temperatures (<65 °C) without post-deposition thermal annealing are studied. The film composition—anatase, rutile or amorphous TiO2—is adjusted by the pressure (p ∼ 0.75–15 Pa) in the deposition chamber. The different crystallographic phases were determined with grazing incidence x-ray diffractometry. The surface morphology and size of TiO2 grains/clusters were imaged with atomic force microscopy. Basic plasma parameters were determined by means of the time-resolved Langmuir probe technique. The power density influx on the substrate was estimated from calorimetric probe measurement. The data from calorimetric probe measurements and time-resolved Langmuir probe served as input parameters for the calculation of influx contributions of particular species. The band-gap energy Eg depends on the film composition and crystallographic phase. Optical parameters (refractive index n + ik, transmittance T, reflectance R and absorbance A) are measured as functions of photon energy in the UV–Vis range by spectroscopic ellipsometry. For the rutile and anatase films agreement with the respective bulk phase is found. Incident photon-current conversion efficiency determined by photo-electrochemical measurements reached the highest values (0.312) for the anatase film.

Title
5. Physical properties of homogeneous TiO2 films prepared by high power impulse magnetron sputtering as a function of crystallographic phase and nanostructure.
Author
Straňák, V.*; Čada, M.; Quaas, M.; Block, S.; Bogdanowicz, R.; Kment, Š.; Wulff, H.; Hubička, Z.; Helm, C.A.; Tichý, M.; Hippler, R.
Date
2009
Identifier
10.1088/0022-3727/42/10/105204
Citation
J. Phys. D: Appl. Phys. 2009, 42, 105204